PRF957,115 datasheet

О ДАТАШИТЕ

Маркировка

PRF957,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PRF957,115 Collector- Emitter Voltage Vceo Max: 10 V Configuration: Single Continuous Collector Current: 0.1 A Current - Collector (ic) (max): 100mA Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 5mA, 6V Dc Current Gain Hfe Max: 50 @ 5mA @ 6V Emitter- Base Voltage Vebo: 1.5 V Frequency - Transition: 8.5GHz Gain: - ID_COMPONENTS: 1948972 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Frequency: 8500 MHz (Typ) Maximum Operating Temperature: + 175 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Noise Figure (db Typ @ F): 1.3dB ~ 1.8dB @ 1GHz ~ 2GHz Package / Case: SC-70-3, SOT-323-3 Power - Max: 270mW Power Dissipation: 270 mW Transistor Polarity: NPN Transistor Type: NPN Voltage - Collector Emitter Breakdown (max): 10V Product Category: Transistors RF Bipolar Small Signal RoHS: yes Collector- Emitter Voltage VCEO Max: 10 V Emitter- Base Voltage VEBO: 1.5 V DC Current Gain hFE Max: 50 Gain Bandwidth Product fT: 8500 MHz Minimum Operating Temperature: - 65 C Factory Pack Quantity: 3000 Part # Aliases: PRF957 T/R Other Names: 568-1177-2, 934043090115, PRF957 T/R
Количество страниц

16 шт.
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